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savantic semiconductor product specification silicon npn power transistors 2SC5250 d escription with to-3pfm package high breakdown voltage high speed switching built-in damper diode applications character display horizontal deflection output applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta= ) symbol parameter conditions value unit v ceo collector-emitter voltage open base 1500 v v ebo emitter-base voltage open collector 6 v i c collector current 8 a i cp collector current-peak 16 a i d diode current 8 a p c collector power dissipation t c =25 50 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-3pfm) and symbol downloaded from: http:///
savantic semiconductor product specification 2 silicon npn power transistors 2SC5250 c haracteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ebo emitter-base breakdown voltage i c =400ma ;i b =0 6 v i ces collector cut-off current v ce =1500v; r be =0 500 a h fe-1 dc current gain i c =1a ; v ce =5v 6 25 h fe-2 dc current gain i c =5a ; v ce =5v 4 7 v ce(sat) collector-emitter saturation voltage i c =5a ; i b =1.25a 5 v v be(sat) base-emitter saturation voltage i c =5a ; i b =1.25a 1.5 v v ecf forward voltage of damper diode i f =8a 2 v t f fall time i cp =5a;i b1 =1a; f h =31.5khz 0.2 0.4 s downloaded from: http:///
savantic semiconductor product specification 3 silicon npn power transistors 2SC5250 package outline fig.2 outline dimensions downloaded from: http:///
savantic semiconductor product specification 4 silicon npn power transistors 2SC5250 downloaded from: http:///

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